Calorimetric investigation of structural processes in porous siliconBUDAGUAN, B. G; AIVAZOV, A. A; SAZONOV, A. YU et al.Journal of non-crystalline solids. 1996, Vol 204, Num 2, pp 169-171, issn 0022-3093Article

Oscillation of photoconductivity in hydrogenated amorphous siliconBUDAGUAN, B. G; AIVAZOV, A. A; STANOVOV, O. N et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 37, pp 6965-6970, issn 0953-8984Article

Relation between the temperature dependence of photoconductivity and thermal equilibrium processes in hydrogenated amorphous Si_1-xN_xBUDAGUAN, B. G; AIVAZOV, A. A; STANOVOV, O. N et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1992, Vol 66, Num 3, pp 355-359, issn 0958-6644Article

Investigation of inhomogeneities in a SiNr : H alloys by infrared spectroscopyAIVAZOV, A. A; BUDAGUAN, B. G; STRYAHILEV, D. A et al.Journal of non-crystalline solids. 1994, Vol 167, Num 1-2, pp 185-191, issn 0022-3093Article

IR selective sensitivity of amorphous/crystalline silicon heterostructureBUDAGUAN, B. G; SHERCHENKOV, A. A; AIVAZOV, A. A et al.Infrared physics & technology. 1996, Vol 37, Num 7, pp 723-726, issn 1350-4495Article

The influence of the microstructure on the thermal stability of a-Si1-xNx:H filmsAIVAZOV, A. A; BUDAGUAN, B. G; SAZONOV, A. YU et al.Physica. B, Condensed matter. 1994, Vol 193, Num 2, pp 195-200, issn 0921-4526Article

The high temperature Stäbler-Wronski effects in a-Si1-xNx:HBUDAGUAN, B. G; STANOVOV, O. N; MEYTIN, M. N et al.Journal of non-crystalline solids. 1993, Vol 163, Num 3, pp 297-302, issn 0022-3093Article

The application of low-frequency glow discharge to high-rate deposition of a-Si :HBUDAGUAN, B. G; POPOV, A. A; SAZONOV, A. Yu et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 39-42, issn 0022-3093, aConference Paper

The properties of powder particles incorporated in a-Si:H filmsBUDAGUAN, B. G; SAZONOV, A. Yu; STRYAHILEV, D. A et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 100-104, issn 0022-3093, aConference Paper

a-Si:H/c-Si heterostructures prepared by 55 kHz glow discharge high-rate deposition techniqueBUDAGUAN, B. G; SHERCHENKOV, A. A; CHERNOMORDIC, V. D et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1123-1126, issn 0022-3093, bConference Paper

Relaxation processes and metastability in amorphous hydrogenated silicon investigated with differential scanning calorimetryBUDAGUAN, B. G; AIVAZOV, A. A; MEYTIN, M. N et al.Physica. B, Condensed matter. 1998, Vol 252, Num 3, pp 198-206, issn 0921-4526Article

The development of a high-rate technology for wide-bandgap photosensitive a-SiC :H alloysBUDAGUAN, B. G; SHERCHENKOV, A. A; GORBULIN, G. L et al.Journal of alloys and compounds. 2001, Vol 327, pp 146-150, issn 0925-8388Article

The properties of a-SiGe:H films fabricated by a novel deposition methodBUDAGUAN, B. G; SHERCHENKOV, A. A; GORBULIN, G. L et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 31, pp 6615-6624, issn 0953-8984Article

Growth process, structure and thermal stability of a-Si_1-xN_x : H filmsAIVAZOV, A. A; BUDAGUAN, B. G; SAZONOV, A. Y et al.Journal of non-crystalline solids. 1992, Vol 146, Num 2-3, pp 190-196, issn 0022-3093Article

Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructuresSHERCHENKOV, A. A; BUDAGUAN, B. G; MAZUROV, A. V et al.SPIE proceedings series. 2004, pp 410-417, isbn 0-8194-5324-2, 8 p.Conference Paper

Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor depositionBUDAGUAN, B. G; SHERCHENKOV, A. A; STRYAHILEV, D. A et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 7, pp 2508-2512, issn 0013-4651Article

Optical absorption edge in structure-inhomogeneous a-Si:H-based alloysBUDAGUAN, B. G; AIVAZOV, A. A; STRYAHILEV, D. A et al.Journal of non-crystalline solids. 1998, Vol 226, Num 3, pp 217-224, issn 0022-3093Article